Power MOSFETs Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
FEATUREs
• IXYS advanced low Qgprocess
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
switching (UIS) rated
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density