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JANTXV2N6849 Hoja de datos - International Rectifier

2N6849 image

Número de pieza
JANTXV2N6849

componentes Descripción

Other PDF
  2001  

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page
7 Pages

File Size
223.2 kB

Fabricante
IR
International Rectifier IR

REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET ®TRANSISTORS
THRU-HOLE - TO-205AF (TO-39)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.


FEATUREs:
■ Repetitive Avalanche Ratings
■ Dynamic dv/dt Rating
■ Hermetically Sealed
■ Simple Drive Requirements
■ Ease of Paralleling
■ ESD Rating: Class 1C per MIL-STD-750, Method 1020

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Número de pieza
componentes Descripción
PDF
Fabricante
HEXFET Transistors
Ver
International Rectifier
HEXFET TRANSISTORS
Ver
International Rectifier
HEXFET TRANSISTORS N-CHANNEL
Ver
International Rectifier
HEXFET TRANSISTORS N-CHANNEL
Ver
International Rectifier
P-CHANNEL HEXFET TRANSISTORS
Ver
International Rectifier
HEXFET TRANSISTORS N-CHANNEL HEXDIP
Ver
International Rectifier
HEXFET® TRANSISTORS N-CHANNEL
Ver
New Jersey Semiconductor
HEXFET® TRANSISTORS N-CHANNEL
Ver
International Rectifier
HEXFET® TRANSISTORS 400V, N-CHANNEL
Ver
International Rectifier
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Ver
International Rectifier

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