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K4X56163PE Hoja de datos - Samsung

K4X56163PE image

Número de pieza
K4X56163PE

componentes Descripción

Other PDF
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PDF
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page
48 Pages

File Size
692.3 kB

Fabricante
Samsung
Samsung Samsung

FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
   - CAS Latency ( 3 )
   - Burst Length ( 2, 4, 8 )
   - Burst Type (Sequential & Interleave)
   - Partial Self Refresh Type ( Full, 1/2, 1/4 array )
   - Internal Temperature Compensated Self Refresh
   - Driver strength ( 1, 1/2, 1/4, 1/8 )
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM/UDM for write masking only.
• 7.8us auto refresh duty cycle.
• CSP package.

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