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M12L128324A-6TIG Hoja de datos - [Elite Semiconductor Memory Technology Inc.

M12L128324A-6TIG image

Número de pieza
M12L128324A-6TIG

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page
49 Pages

File Size
771.8 kB

Fabricante
ESMT
[Elite Semiconductor Memory Technology Inc. ESMT

GENERAL DESCRIPTION
The M12L128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.


FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
    - CAS Latency (1, 2 & 3 )
    - Burst Length ( 1, 2, 4, 8 & full page )
    - Burst Type ( Sequential & Interleave )
• All inputs are sampled at the positive going edge of the system clock
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)

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Número de pieza
componentes Descripción
PDF
Fabricante
1M x 32 Bit x 4 Banks Synchronous DRAM
Ver
[Elite Semiconductor Memory Technology Inc.
1M X 32 Bit X 4 Banks Synchronous DRAM
Ver
AMIC Technology
1M x 32 Bit x 4 Banks Synchronous DRAM ( Rev : 2006_02 )
Ver
[Elite Semiconductor Memory Technology Inc.
1M x 32 Bit x 4 Banks Synchronous DRAM ( Rev : 2006 )
Ver
[Elite Semiconductor Memory Technology Inc.
1M x 32 Bit x 4 Banks Synchronous DRAM
Ver
[Elite Semiconductor Memory Technology Inc.
1M x 32 Bit x 4 Banks Synchronous DRAM
Ver
[Elite Semiconductor Memory Technology Inc.
Synchronous DRAM 1M x 16 Bit x 4 Banks
Ver
A-Data Technology
1M X 16 Bit X 4 Banks Synchronous DRAM
Ver
AMIC Technology
Synchronous DRAM 1M x 16 Bit x 4 Banks
Ver
A-Data Technology
1M x 16 Bit x 4 Banks Synchronous DRAM
Ver
[Elite Semiconductor Memory Technology Inc.

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