DESCRIPTION
The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
FEATURES
• High output power
Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
• High power gain
Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
• High power added efficiency
P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBm
APPLICATION
• For UHF Band power amplifiers