DESCRIPTION
The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers.

FEATURES
High output power 
     Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm
High power gain
     Gp=10.5dB(TYP.) @f=1.9GHz
High power added efficiency
     P.A.E =38%(TYP.) @f=1.9GHz,Pin=33dBm
Hermetic Package

APPLICATION
For L/S Band power amplifiers