DESCRIPTION
The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.

FEATURES
   Low noise figure @ f=12GHz
      MGF4951A : NFmin. = 0.40dB (Typ.)
      MGF4952A : NFmin. = 0.60dB (Typ.)
   High associated gain @ f=12GHz
      Gs = 12.0dB (Typ.)

APPLICATION
   C to K band low noise amplifiers