DESCRIPTION
The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
Low noise figure @ f=20GHz
NFmin. = 0.55dB (Typ.)
High associated gain @ f=20GHz
Gs = 10.5dB (Typ.)
APPLICATION
C to K band low noise amplifiers