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MGFK35V4045 Hoja de datos - MITSUBISHI ELECTRIC

MGFK35V4045 image

Número de pieza
MGFK35V4045

Other PDF
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page
4 Pages

File Size
134 kB

Fabricante
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
Internally matched to 50(ohm) system
Flip-chip mounted
• High output power
   P1dB=3.5W (TYP.) @f=14.0 – 14.5GHz
• High linear power gain
   GLP=6.4dB (TYP.) @f=14.0 – 14.5GHz
• High power added efficiency
   P.A.E.=20% (TYP.) @f=14.0 – 14.5GHz
  
APPLICATION
• 14.0 – 14.5 GHz band power amplifiers

 

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