DESCRIPTION
The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
Internally impedance matched
● High output power
   P1dB=8.0W (TYP.) @f=10.7 – 11.7GHz
● High linear power gain
   GLP=7.0dB (TYP.) @f=10.7 – 11.7GHz
● High power added efficiency
   P.A.E.=26% (TYP.) @f=10.7 – 11.7GHz

APPLICATION
● For use in 10.7 – 11.7 GHz band power amplifiers