MMG2401NR2 Hoja de datos - NXP Semiconductors.
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MMG2401NR2
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NXP Semiconductors.
Indium Gallium Phosphorus HBT
WLAN Power Amplifier
Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz.
• 26.5 dBm P1dB @ 2450 MHz
• Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB)
• High Gain, High Efficiency and High Linearity
• EVM = 3% Typ @ Pout = +19 dBM, 14% PAE
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel.
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