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MP4025 Hoja de datos - Toshiba

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Número de pieza
MP4025

Other PDF
  2000  

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page
3 Pages

File Size
133.9 kB

Fabricante
Toshiba
Toshiba Toshiba

High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive
Load Switching

•  Small package by full molding (SIP 10 pins)
•  Built-in resistance (RB).
•  Surge voltage is clamped by zener diode (C-B).
•  Low VCE (sat): VCE (sat)= 1.2 V (max) (IC= 0.5 A, VBH= 4.2 V)
•  High DC current gain: hFE= 2000 (min) (VCE =2 V, IC= 0.7 A)


Número de pieza
componentes Descripción
PDF
Fabricante
Silicon NPN Epitaxial Type Power Transistor Module (Four Darlington Power Transistors in One)
Ver
Toshiba
MODULE SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR (FOUR DARLINGTON POWER TRANSISTORS IN ONE) ( Rev : 2000 )
Ver
Toshiba
Module Silicon NPN Epitaxial Type Power Transistor (Four Darlington Power Transistors in One)
Ver
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One)
Ver
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One)
Ver
Toshiba
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One)
Ver
Toshiba
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Four Darlington Power Transistors in One)
Ver
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One)
Ver
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One)
Ver
Toshiba
Power Transistor Module Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One)
Ver
Toshiba

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