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MP4305 Hoja de datos - Toshiba

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Número de pieza
MP4305

Other PDF
  2002  

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6 Pages

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152.1 kB

Fabricante
Toshiba
Toshiba Toshiba

High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load Switching

• Small package by full molding (SIP 12 pin)
• High collector power dissipation (4 devices operation)
   : PT = 4.4 W (Ta = 25°C)
• High collector current: IC (DC) = −5 A (max)
• High DC current gain: hFE = 2000 (min) (VCE = −5 V, IC = −3 A)
• Diode included for absorbing fly-back voltage


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TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One)
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One)
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One)
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TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One)
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Silicon NPN Epitaxial Type Power Transistor Module (Four Darlington Power Transistors in One)
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Silicon NPN Epitaxial Type Power Transistor Module (Four Darlington Power Transistors in One)
Ver
Toshiba
MODULE SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR (FOUR DARLINGTON POWER TRANSISTORS IN ONE) ( Rev : 2000 )
Ver
Toshiba
Module Silicon NPN Epitaxial Type Power Transistor (Four Darlington Power Transistors in One)
Ver
Toshiba
Power Transistor Module Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One)
Ver
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One)
Ver
Toshiba

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