MP4025(2000) Hoja de datos - Toshiba
Número de pieza
MP4025
componentes Descripción
Other PDF
PDF
page
2 Pages
File Size
56.9 kB
Fabricante
Toshiba
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive
Load Switching
• Small package by full molding (SIP 10 pin)
• Built-in resistance (RB).
• Surge voltage is clamped by zener diode (C-B).
• Low VCE (sat): VCE (sat) = 1.2 V (max) (IC = 0.5 A, VBH = 4.2 V)
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 0.7 A)
Número de pieza
componentes Descripción
PDF
Fabricante
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TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR 4 IN 1) ( Rev : 2000 )
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TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
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TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) ( Rev : 2002 )
Toshiba
TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
Toshiba
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