MP4305(2002) Hoja de datos - Toshiba
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MP4305
componentes Descripción
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6 Pages
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143 kB
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Toshiba
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
• Small package by full molding (SIP 12 pin)
• High collector power dissipation (4 devices operation)
: PT = 4.4 W (Ta = 25°C)
• High collector current: IC (DC) = −5 A (max)
• High DC current gain: hFE = 2000 (min) (VCE = −5 V, IC = −3 A)
• Diode included for absorbing fly-back voltage.
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componentes Descripción
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Fabricante
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
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TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR 4 IN 1) ( Rev : 2000 )
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) ( Rev : 2000 )
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TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR 4 IN 1) ( Rev : 2000 )
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TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
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TOSHIBA POWER TRANSISTOR MODULE SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER TRANSISTOR 4 IN 1) ( Rev : 2000 )
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TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
Toshiba
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