MPS-U06 Hoja de datos - New Jersey Semiconductor
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MPS-U06
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New Jersey Semiconductor
NPN SILICON ANNULAR AMPLIFIER TRANSISTORS
. . . designed for general-purpose, high-voltage amplifier anddriver applications.
• High Collector-Emitter Breakdown Voltage-
BVCEO = 60 Vdc(Min) @ Ic = 1.0 mAdc - MPS-U05
80 Vdc(Min) @ lc = 1.0 mAdc - MPS-U06
• High Power Dissipation - PQ = 10 W @ TC = 25°C
• Complements to PNP MPS-U55 and MPS-U56
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