MPS3826 Hoja de datos - New Jersey Semiconductor
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MPS3826
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New Jersey Semiconductor
NPN SILICON ANNULAR TRANSISTORS
. . . designed for use in general-purpose amplifier applications.
• Collector Emitter Breakdown Voltage -
BVCEO = 45 Vdc (Min) @ Ic = 10 mAdc
• High Current-Gain—Bandwidth Product -
fT = 500 MHz (Typ) @ Ic = 10 mAdc
• Low Output Capacitance —
Cob = 2.2pF (Typ) @ VCB= 10 Vdc
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