MPS6565 Hoja de datos - New Jersey Semiconductor
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MPS6565
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New Jersey Semiconductor
NPN SILICON ANNULAR TRANSISTORS
. . . designed for low-current amplifier applications.
• Collector-Emitter Breakdown Voltage -
BVCEO = 45 Vdc (Min) @ Ic = 1.0 mAdc
• Output Capacitance -
Cob= 3.5 pF (Max) @ VCB = 10 mAdc
• Full Designers Curves
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