datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Renesas Electronics  >>> N0302P PDF

N0302P Hoja de datos - Renesas Electronics

N0302P image

Número de pieza
N0302P

Other PDF
  no available.

PDF
DOWNLOAD     

page
8 Pages

File Size
234.4 kB

Fabricante
Renesas
Renesas Electronics Renesas

DESCRIPTION
The N0302P is a switching device, which can be driven directly by a 4.0 V power source.
This N0302P features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• 4.0 V drive available
• Low on-state resistance
   RDS(on)1 = 54 mΩ MAX. (VGS = −10 V, ID = −2.2 A)
   RDS(on)2 = 77 mΩ MAX. (VGS = −4.5 V, ID = −2.2 A)
   RDS(on)3 = 150 mΩ MAX. (VGS = −4.0 V, ID = −2.2 A)
• Built-in gate protection diode


Número de pieza
componentes Descripción
PDF
Fabricante
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]