Fabricante
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Renesas Electronics
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DESCRIPTION
The N0302P is a switching device, which can be driven directly by a 4.0 V power source.
This N0302P features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• 4.0 V drive available
• Low on-state resistance
RDS(on)1 = 54 mΩ MAX. (VGS = −10 V, ID = −2.2 A)
RDS(on)2 = 77 mΩ MAX. (VGS = −4.5 V, ID = −2.2 A)
RDS(on)3 = 150 mΩ MAX. (VGS = −4.0 V, ID = −2.2 A)
• Built-in gate protection diode
Número de pieza
componentes Descripción
PDF
Fabricante
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology