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UPA1830GR-9JG Hoja de datos - NEC => Renesas Technology

UPA1830GR-9JG image

Número de pieza
UPA1830GR-9JG

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8 Pages

File Size
69.1 kB

Fabricante
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The µPA1830 is a switching device which can be driven directly by a 4.0 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on.


FEATURES
• 4.0 V drive available
• Low on-state resistance
    RDS(on)1 = 17 mΩ MAX. (VGS = −10 V, ID = −4.5 A)
    RDS(on)2 = 24.5 mΩ MAX. (VGS = −4.5 V, ID = −4.5 A)
    RDS(on)3 = 28 mΩ MAX. (VGS = −4.0 V, ID = −4.5 A)
• Built-in G-S protection diode against ESD

Page Link's: 1  2  3  4  5  6  7  8 

Número de pieza
componentes Descripción
PDF
Fabricante
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology

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