NE4210M01-T1 Hoja de datos - NEC => Renesas Technology
Número de pieza
NE4210M01-T1
componentes Descripción
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no available.
PDF
page
12 Pages
File Size
63.2 kB
Fabricante
NEC => Renesas Technology
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz
• 6pin super minimold package
• Gate Width: Wg = 200µm
Número de pieza
componentes Descripción
PDF
Fabricante
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
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