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NESG2021M16 Hoja de datos - California Micro Devices => Onsemi

NESG2021M16 image

Número de pieza
NESG2021M16

Other PDF
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page
3 Pages

File Size
222.9 kB

Fabricante
CMD
California Micro Devices => Onsemi CMD

DESCRIPTION
NECs NESG2021M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.


FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
   VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
   NF = 0.9 dB at 2 GHz
   NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
   MSG = 22.5 dB at 2 GHz
• LOW PROFILE M16 PACKAGE:
   6-pin lead-less minimold

Page Link's: 1  2  3 

Número de pieza
componentes Descripción
PDF
Fabricante
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR ( Rev : 2004 )
Ver
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.

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