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NESG3031M05 Hoja de datos - NEC => Renesas Technology

NESG3031M05 image

Número de pieza
NESG3031M05

Other PDF
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page
3 Pages

File Size
98.1 kB

Fabricante
NEC
NEC => Renesas Technology NEC

FEATURES
• LOW NOISE FIGURE AND HIGH-GAIN
   NF= 0.95 dB TYP, Ga= 10 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.2 GHz
   NF= 1.1 dB TYP, Ga= 9.5 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN:
   MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT TECHNOLOGY:
   USH3 process, fmax = 110 GHz
• M05 PACKAGE:
   Flat-lead 4 pin thin-type super minimold package

Page Link's: 1  2  3 

Número de pieza
componentes Descripción
PDF
Fabricante
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Micro Devices => Onsemi
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR ( Rev : 2004 )
Ver
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.

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