Description:
The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.

FEATUREs:
• High DC Current Gain: hFE = 3500 Typ @ IC = 10A
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors