Power MOSFET and Schottky Diode
−20 V, −2.5 A, P−Channel with Schottky
Barrier Diode, TSOP−6

FEATUREs
• Fast Switching
• Low Gate Change
• Low RDS(on)
• Low VF Schottky Diode
• Independently Connected Devices to Provide Design Flexibility
• This is a Pb−Free Device

APPLICATIONs
• DC−DC Converters
• Portable Devices like PDA’s, Cellular Phones, and Hard Drives