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NTLJF3117P Hoja de datos - ON Semiconductor

NTLJF3117P image

Número de pieza
NTLJF3117P

componentes Descripción

Other PDF
  2021  

PDF
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page
8 Pages

File Size
88.3 kB

Fabricante
ONSEMI
ON Semiconductor ONSEMI

Power MOSFET and Schottky Diode

−20 V, −4.1 A, P−Channel, with 2.0 A 
Schottky Barrier Diode, 2x2 mm, μCool Package


FEATUREs
• FETKY Configuration with MOSFET plus Low Vf Schottky Diode
• μCOOL Package Provides Exposed Drain Pad for Excellent
   Thermal Conduction
• 2x2 mm Footprint Same as SC−88 Package Design
• Independent Pinout Provides Circuit Design Flexibility
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
• High Current Schottky Diode: 2 A Current Rating
• This is a Pb−Free Device


APPLICATIONs
• Optimized for Portable Applications like Cell Phones, Digital
   Cameras, Media Players, etc.
• DC−DC Buck Circuit
• Li−Ion Battery Applications
• Color Display and Camera Flash Regulators


Número de pieza
componentes Descripción
PDF
Fabricante
Power MOSFET and Schottky Diode
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Power MOSFET and Schottky Diode ( Rev : 2016 )
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Power MOSFET and Schottky Diode
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Power MOSFET and Schottky Diode
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Power MOSFET and Schottky Diode
Ver
ON Semiconductor
Power MOSFET and Schottky Diode
Ver
ON Semiconductor
Power MOSFET and Schottky Diode
Ver
ON Semiconductor

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