Fabricante
![CEL](/logo/CEL.png)
California Eastern Laboratories.
![CEL](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
The NX5521 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are designed and ideal for Fiber To The Home (FTTH).
FEATURES
• Optical output power Po = 5.0 mW
• Low threshold current lth = 8 mA
• Differential efficiency ηd = 0.25 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Fiber coupling point 5.8 mm
APPLICATION • 155 Mbps FTTH P2P (Fiber To The Home Point to Point) system
APPLICATION • 155 Mbps FTTH P2P (Fiber To The Home Point to Point) system
Número de pieza
componentes Descripción
PDF
Fabricante
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE ( Rev : 2006 )
California Eastern Laboratories.
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
Renesas Electronics
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
NEC => Renesas Technology
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Renesas Electronics