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NX6342EP Hoja de datos - Renesas Electronics

NX6342EP image

Número de pieza
NX6342EP

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page
7 Pages

File Size
190.4 kB

Fabricante
Renesas
Renesas Electronics Renesas

DESCRIPTION
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


FEATURES
• Optical output power PO = 8.5 mW
• Low threshold current Ith = 8 mA
• Differential efficiency ηd = 0.23 W/A
• Wide operating temperature range TC = −5 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.0 mm


APPLICATIONS
• 10 Gb/s BASE-LR/LW (IEEE802.3ae)


Número de pieza
componentes Descripción
PDF
Fabricante
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE
Ver
Renesas Electronics
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
Ver
Renesas Electronics
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
Ver
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
Ver
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
Ver
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
Ver
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
Ver
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Ver
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Ver
California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Ver
Renesas Electronics

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