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NX6514EH image

Número de pieza
NX6514EH

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7 Pages

File Size
194 kB

Fabricante
Renesas
Renesas Electronics Renesas

DESCRIPTION
The NX6514EH is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


FEATURES
• Optical output power PO = 5.0 mW
• Low threshold current Ith = 10 mA
• Differential efficiency ηd = 0.35 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.7 mm


APPLICATIONS
• 1.25 Gb/s FTTH P2P
• OC-48 IR-2


Número de pieza
componentes Descripción
PDF
Fabricante
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Ver
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Ver
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Ver
California Eastern Laboratories.
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Ver
California Eastern Laboratories.
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
Ver
California Eastern Laboratories.
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
Ver
Renesas Electronics
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
Ver
Renesas Electronics
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
Ver
Renesas Electronics
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
Ver
California Eastern Laboratories.
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
Ver
California Eastern Laboratories.

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