General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS302PD.

FEATUREs
■ Ultra low collector-emitter saturation voltage VCEsat
■ 4 A continuous collector current capability IC
■ Up to 15 A peak current
■ Very low collector-emitter saturation resistance
■ High efficiency due to less heat generation

APPLICATIONs
■ Power management functions
■ Charging circuits
■ DC-to-DC conversion
■ MOSFET gate driving
■ Power switches (e.g. motors, fans)
■ Thin Film Transistor (TFT) backlight inverter