General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

PNP complement: PBSS5580PA.

FEATUREs and benefits
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
■ Exposed heat sink for excellent thermal and electrical conductivity
■ Leadless small SMD plastic package with medium power capability

APPLICATIONs
■ Loadswitch
■ Battery-driven devices
■ Power management
■ Charging circuits
■ Power switches (e.g. motors, fans)