Número de pieza
PBSS5330PA
Fabricante
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NXP Semiconductors.
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General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN complement: PBSS4330PA.
FEATUREs and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
• Exposed heat sink for excellent thermal and electrical conductivity
• Leadless small SMD plastic package with medium power capability
APPLICATIONs
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
Número de pieza
componentes Descripción
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Fabricante
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Nexperia B.V. All rights reserved
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