Número de pieza
PBSS5350TH
Fabricante
![NEXPERIA](/logo/NEXPERIA.png)
Nexperia B.V. All rights reserved
![NEXPERIA](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
FEATUREs and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• High collector current gain (hFE) at high IC
• Higher efficiency leading to less heat genereation
• High temperature applications up to 175 °C
• AEC-Q101 qualified
APPLICATIONs
• Power management
• DC-to-DC conversion
• Supply line switches
• Battery charger switches
• Peripheral drivers
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver
Número de pieza
componentes Descripción
PDF
Fabricante
50 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 3 A PNP low VCEsat (BISS) transistor
Philips Electronics
50 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A PNP low VCEsat (BISS) transistor
Philips Electronics
50 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved