General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4350Z

FEATUREs and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• High collector current gain (hFE) at high IC
• High energy efficiency due to less heat generation
• AEC-Q101 qualified

APPLICATIONs
• DC/DC converters
• Supply line switching
• Battery charger
• LED backlighting
• Linear voltage regulation (LDO)
• Driver in low supply voltage applications, e.g. lamps, LEDs
• Inductive load driver (for example relays, buzzers, motors)