PJ4800 Hoja de datos - PANJIT INTERNATIONAL
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PJ4800
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5 Pages
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PANJIT INTERNATIONAL
FEATURES
• RDS(ON), VGS@10V,IDS@8A=20mΩ
• RDS(ON), VGS@5.0V,IDS@6A=31mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment substance directive request
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Fabricante
30V N-Channel Enhancement Mode MOSFET
Shanghai Leiditech Electronic Technology Co., Ltd
30V N-Channel Enhancement Mode MOSFET
Shanghai Leiditech Electronic Technology Co., Ltd
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