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PSMN130-200D Hoja de datos - NXP Semiconductors.

PSMN130-200D image

Número de pieza
PSMN130-200D

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page
12 Pages

File Size
161.3 kB

Fabricante
NXP
NXP Semiconductors. NXP

General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.


FEATUREs and benefits
■ Higher operating power due to low thermal resistance
■ Low conduction losses due to low on-state resistance
■ Suitable for high frequency applications due to fast switching characteristics


APPLICATIONs
■ DC-to-DC converters
■ Switched-mode power supplies

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Número de pieza
componentes Descripción
PDF
Fabricante
N-channel TrenchMOS SiliconMAX standard level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Ver
NXP Semiconductors.

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