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RD01MUS1 Hoja de datos - MITSUBISHI ELECTRIC

RD01MUS1 image

Número de pieza
RD01MUS1

Other PDF
  2006   2010  

PDF
DOWNLOAD     

page
7 Pages

File Size
388.2 kB

Fabricante
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


FEATURES
   High power gain:
      Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
   High Efficiency: 65%typ.


APPLICATION
   For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.


Número de pieza
componentes Descripción
PDF
Fabricante
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2006 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2010 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
Ver
Quanzhou Jinmei Electronic
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
Ver
Quanzhou Jinmei Electronic
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W ( Rev : 2006 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W ( Rev : 2006 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W ( Rev : 2010 )
Ver
MITSUBISHI ELECTRIC

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