RD09MUP2(2010) Hoja de datos - MITSUBISHI ELECTRIC
Número de pieza
RD09MUP2
componentes Descripción
Other PDF
PDF
page
8 Pages
File Size
140.1 kB
Fabricante
MITSUBISHI ELECTRIC
DESCRIPTION
RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
FEATURES
• High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
• High Efficiency: 50%min. (520MHz)
• Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in UHF band mobile radio sets.
Número de pieza
componentes Descripción
PDF
Fabricante
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2010 )
MITSUBISHI ELECTRIC
Share Link: