RD12MVP1(2006) Hoja de datos - Mitsumi
Número de pieza
RD12MVP1
componentes Descripción
Other PDF
PDF
page
7 Pages
File Size
118.3 kB
Fabricante
Mitsumi
DESCRIPTION
RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
FEATURES
• High Power Gain
Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
• High Efficiency: 55%min. (175MHz)
• No gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
Número de pieza
componentes Descripción
PDF
Fabricante
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W ( Rev : 2010 )
MITSUBISHI ELECTRIC
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