RD00HVS1(2010) Hoja de datos - Mitsumi
Número de pieza
RD00HVS1
componentes Descripción
Other PDF
PDF
page
7 Pages
File Size
129.1 kB
Fabricante
Mitsumi
DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
FEATURES
High power gain
Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
1
Número de pieza
componentes Descripción
PDF
Fabricante
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
Quanzhou Jinmei Electronic
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
( Rev : 2010 )
MITSUBISHI ELECTRIC
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