Fabricante
Intersil
These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors.
Formerly developmental type TA09046.
FEATUREs
• -6A, -80V and -100V
• rDS(ON) = 0.600Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Número de pieza
componentes Descripción
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Fabricante
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET
Fairchild Semiconductor
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET
Intersil
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs
Intersil
1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
Intersil
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
Intersil
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs
Intersil
-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
Harris Semiconductor
-2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs
Intersil
1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
New Jersey Semiconductor
6A, -100V, 0.565 Ohm, Rad Hard, P-Channel Power MOSFETs
Intersil