RJP30 Hoja de datos - Renesas Electronics
Número de pieza
RJP30
componentes Descripción
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7 Pages
File Size
83.1 kB
Fabricante
Renesas Electronics
Features
• Trench gate and thin wafer technology (G6H-II series)
• Low collector to emitter saturation voltage VCE(sat) = 1.1V typ
• High speed switching tr = 90 ns typ, tf = 250 ns typ
• Low leak current ICES = 1µA max
• Isolated package TO-220FL
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