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RMWB12001(V2) Hoja de datos - Raytheon Company

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Número de pieza
RMWB12001

componentes Descripción

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9 Pages

File Size
80.9 kB

Fabricante
Raytheon
Raytheon Company Raytheon

Description
The RMWB12001 is a 3-stage GaAs MMIC amplifier designed as an 8.5 to 12 GHz Buffer Amplifier for use in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWB12001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications.


FEATUREs
■ 4 mil substrate
■ Small-signal gain 25 dB (typ.)
■ 3 dB compressed Pout 21 dBm (typ.)
■ Voltage detector included to monitor Pout
■ Chip size 2.2 mm x 1.7 mm

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