RT3C66M Hoja de datos - Isahaya Electronics
Número de pieza
RT3C66M
componentes Descripción
Other PDF
no available.
PDF
page
5 Pages
File Size
137.3 kB
Fabricante
Isahaya Electronics
DESCRIPTION
RT3C66M is a sillicon NPN epitaxial type dual transistor. It is designed for differential amplify application.
FEATURE
● High Vceo Vceo=160V
● Good two elements characteristics
hFE1/hFE2=1.0 typ
｜ VBE1-VBE2｜ =2mV typ
APPLICATION
For differential amplify application.
Número de pieza
componentes Descripción
PDF
Fabricante
Dual Transistor For Differential Amplify Application Silicon Pnp Epitaxial Type
Isahaya Electronics
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FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ( Rev : 2013 )
Isahaya Electronics
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