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SKB10N60A(2002) Hoja de datos - Infineon Technologies

Q67040-S4458 image

Número de pieza
SKB10N60A

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Infineon
Infineon Technologies Infineon

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
   - Motor controls
   - Inverter
• NPT-Technology for 600V applications offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/

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Fabricante
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode ( Rev : 2007 )
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode ( Rev : 2008 )
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode ( Rev : 2008 )
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode ( Rev : 2007 )
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Ver
Infineon Technologies

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