Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

• 75% lower Eoff compared to previous generation
   combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for: Motor controls, Inverter
• NPT-Technology for 600V applications offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
• Very soft, fast recovery anti-parallel Emitter Controlled
   Diode
• Isolated TO-220, 2.5kV, 60s
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/