SPB20N60S5(2001) Hoja de datos - Infineon Technologies
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SPB20N60S5
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Infineon Technologies
Cool MOS™ Power Transistor
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Improved periodic avalanche rating
• Extreme dv/dt rated
• Optimized capacitances
• Improved noise immunity
• Former development designation:
SPPx1N60S5/SPBx1N60S5
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