DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.0065Ω
■ LOW THRESHOLD DRIVE
■ LOGIC LEVEL DEVICE

APPLICATIONS
■ HIGH CURRENT SWITCHING APPLICATION