Description
This device utilizes the advanced design rules of STs proprietary STripFET™ technology. The innovative process coupled with unique metallization techniques makes it possible to produce the most advanced low voltage Power MOSFET in an SO-8 package. The device is therefore suitable for demanding DC-DC converter applications where high efficiency at high output current is needed.

FEATUREs
■ Optimal RDS(on) x Qg trade off @ 4.5 V
■ Conduction losses reduced
■ Switching losses reduced

APPLICATIONs
■ Switching applications