SWD3N10 Hoja de datos - Xian Semipower Electronic Technology Co., Ltd.
Número de pieza
SWD3N10
componentes Descripción
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no available.
PDF
page
5 Pages
File Size
509.5 kB
Fabricante
Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
FEATUREs
■ High ruggedness
■ RDS(ON) (Max 107mΩ)@VGS=10V
■ Gate Charge (Typical 21nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
Número de pieza
componentes Descripción
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Fabricante
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